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Country CodeFUJITSU
MICROCHIP
Your search 23N50E and relate product result :21 items
Description: N-Channel Enhancement Mode Field Effect Transistor Features: - Low On-Resistance - Low Gate Threshold Voltage - Fast Switching Speed - High Avalanche Energy - Low Input Capacitance - High
Stock:10000
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The 23N50E is a N-channel enhancement-mode power MOSFET manufactured by Fuji Electric. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay d
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Stock:3232
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Stock:72
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Description: This is a N-channel MOSFET transistor manufactured by Fuji Electric. It has a maximum drain-source voltage of 500V and a maximum drain current of 23A. Feature: Low on-resistance Low gat
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Stock:237
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Stock:11970
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Stock:990
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Package: TO-3P Manufacturer: FUJI Description: The FMH23N50ESCQ-P is a high voltage N-channel MOSFET with a drain-source voltage of 500V, a drain current of 23A, and a gate-source voltage of ±20V. F
Stock:10000
Minimum:2
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Stock:10000
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Description: The FMH23N50E is a N-channel enhancement mode power MOSFET with a maximum drain source voltage of 500V and a maximum drain current of 23A. It is designed for use in high-voltage switching
Stock:10000
Minimum:2
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Stock:10000
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Description: FMH23N50E is a N-channel MOSFET transistor manufactured by Fuji Electric. It has a maximum drain-source voltage of 500V and a maximum drain current of 23A. Features: Low on-resistanc
Stock:10000
Minimum:2
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Stock:3200
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Stock:42
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