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Country CodeMITSUBISHI
Your search 2SC1971 and relate product result :7 items
TO-220
MIT
NPN EPITAXIAL PLANAR TYPEfor RF power amplifiers on VHF band Mobile radio applications
Description: 2SC1971 is a NPN silicon transistor manufactured by Mitsubishi Electric. Features: Collector-Base Voltage: VCBO = 60V Collector-Emitter Voltage: VCEO = 50V Emitter-Base Voltage: VEBO
Stock:10000
Minimum:2
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TO-220
MIT
03
NPN EPITAXIAL PLANAR TYPEfor RF power amplifiers on VHF band Mobile radio applications
Stock:10000
Minimum:1
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Stock:9940
Minimum:1
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Description: The 2SC1971 is a NPN silicon epitaxial transistor manufactured by Mitsubishi. Features: High breakdown voltage High transition frequency High current gain Low noise Low collector-e
Stock:9898
Minimum:1
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Stock:22234
Minimum:1
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Stock:30
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company