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Country CodeTOSHIBA
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Your search 30F124 and relate product result :16 items
30F124 is a NPN transistor manufactured by ON Semiconductor. It is a TO-220 package and is used for general purpose switching and amplification. Description: The 30F124 is a NPN transistor with a max
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Manufacturer: Toshiba Package: TO-220F Description: GT30F124 is a N-channel MOSFET transistor manufactured by Toshiba. Features: Low on-resistance High-speed switching Low threshold voltage High-v
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Description: GT30F124 is a high-performance, low-voltage, low-power CMOS 8-bit microcontroller with a 16-bit timer/counter, a 16-bit PWM timer, a 10-bit A/D converter, and a serial interface. Feature
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Description: The 30F124 IGBT is a high power, high voltage insulated gate bipolar transistor (IGBT) with a TO-220F package. It is designed for use in high frequency switching applications. Features:
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Description: GT30F124 is a N-channel enhancement mode field-effect transistor (FET) with a TO220F package. Features: - Low on-resistance - Low gate charge - Fast switching - Low input capacitance Ap
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Description: GT30F124 is a 30A, 1200V, N-channel IGBT (Insulated Gate Bipolar Transistor) manufactured by Toshiba. It is housed in a TO220F package. Features: Low saturation voltage High speed
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