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Country CodeSIEMENS APT
Your search APT30GT60BR and relate product result :12 items
TO-3P
APT
04+
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Description: 30A, 600V, N-Channel IGBT Features: Low gate charge Low saturation voltage High speed switching Low on-state resistance High input impedance High surge current capability High reli
Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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TO-3P
APT
00+
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Description: APT30GT60BRD is a TO-3P (TO-220) insulated type power MOSFET transistor with a maximum drain current of 30A and a maximum drain-source voltage of 600V. Features: Low on-resistance Low
Stock:10000
Minimum:2
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Description: APT30GT60BRD is a high-speed, low-loss, and low-noise IGBT module with a TO-3P package. Features: High speed switching Low loss Low noise High current capacity High voltag
Stock:10000
Minimum:2
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Stock:4
Minimum:1
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Stock:77
Minimum:1
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Stock:25
Minimum:1
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Description: APT30GT60BRDQ2G is a high-power, high-speed, insulated-gate bipolar transistor (IGBT) module manufactured by Advanced Power Technology (APT). Features: 600V blocking voltage 30
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Description: APT30GT60BRDQ2G is a high-power, high-speed, insulated-gate bipolar transistor (IGBT) module manufactured by Advanced Power Technology (APT). Features: 600V blocking voltage 30
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TO-247
APT
The Thunderbolt IGBT? is a new generation of high voltage power IGBTs.
Description: APT30GT60BRG is a high-speed IGBT module with a TO-247 package. Features: Low saturation voltage High speed switching Low switching losses High input impedance High current capacity
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