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Country CodeNXP
PHILIPS
Your search BFG520 and relate product result :25 items
Stock:30000
Minimum:16
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Description: BFG520 is a N-Channel enhancement mode MOSFET. Features: - Low on-resistance - Low gate charge - Low input capacitance - Fast switching speed - High power and current handling capabilit
Stock:10000
Minimum:3
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Description: BFG520/X is a NPN silicon planar epitaxial transistor manufactured by NXP. Features: - Low collector-emitter saturation voltage - High current gain - Low noise - High frequency operation
Stock:10000
Minimum:5
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Stock:10000
Minimum:4
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Description: NXP BFG520XR, N-Channel Enhancement Mode Field Effect Transistor Features: Low On-Resistance Low Gate Charge Fast Switching High Avalanche Energy Low Threshold Voltage High
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NPN 9 GHz wideband transistor; Package: SOT143B SOT4; Container: Tape reel smd
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PH2
NPN 9 GHz wideband transistors - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 20 mA; fT: 9 GHz; Frequency: 1.85 MHz; GUM @ f1: 17 dB; GUM @ f2: 11 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; IC: 70 mA; ITO: 26 dBm; Noise figure; Package: SOT343N SO4; Container: Tape reel smd
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Description: NXP SOT143 NPN Bipolar Transistor Features: - Low collector-emitter saturation voltage - High current gain - Low noise - High switching speed Application: The BFG520215 is a NPN b
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company