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Country CodeEUPEC
INFINEON
Your search BSM50GD120DN2 and relate product result :22 items
MODULE
Eupec
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IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: The BSM50GD120DN2 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: 1200V blocking voltage 50A collector current Low switching losses High frequency o
Stock:2000
Minimum:1
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Description: 1200V, 50A, N-Channel IGBT Features: Low VCE(sat) Low switching losses Low gate charge High current capability Short-circuit withstand time RoHS compliant Applications: Motor contr
Stock:3324
Minimum:1
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Stock:2000
Minimum:1
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Description: The BSM50GD120DN2 is an insulated-gate bipolar transistor (IGBT) module made by Eupec. It offers a high current of 1200A and a voltage of 50V. Features: Insulated gate bipolar transist
Stock:2000
Minimum:1
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MODULE
Infineon Technologies AG
17+
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Stock:2000
Minimum:1
Favorite
MODULE
Eupec
12+
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: The BSM50GD120DN2 is an insulated gate bipolar transistor (IGBT) module from EUPEC. It is a three-phase inverter module with a rated current of 1200A and a voltage of 1200V. Features: *
Stock:23432
Minimum:1
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MODULE
Eupec
IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate
The BSM50GD120DN2E3226 is an IGBT module made by EUPEC. It is a high power, double side cooled module and is suitable for welding and other industrial applications. Features: 1200V blocking voltage
Stock:2000
Minimum:1
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MODULE
Eupec
04+
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: BSM50GD120DN2_B10 is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: - 1200 Volts - 50 Amps - 4.1 mOhms - Low Vce(sat) - Improved EMI performance
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: BSM50GD120DN2G is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by EUPEC. Features: 1200V blocking voltage 50A collector current Low switching losses High s
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: The BSM50GD120DN2-B10 is an insulated gate bipolar transistor (IGBT) module from EUPEC. It is a 1200V, 50A device with a maximum junction temperature of 150°C. Features: 1200V blocking
Stock:2000
Minimum:1
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Description: Infineon BSM50GD120DN2E3226 is a 1200V, 50A IGBT module. Features: Low switching losses Low EMI Low gate charge Low collector-emitter saturation voltage High current handling capabi
Stock:3305
Minimum:1
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Stock:2000
Minimum:1
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Description: The BSM50GD120DN2E3226 is a 1200V/50A IGBT module from EUPEC. Features: 1200V/50A IGBT module Low loss High power density Low switching losses Low EMI High surge capabi
Stock:2000
Minimum:1
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Description: BSM50GD120DN2G is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by EUPEC. Features: 1200V blocking voltage 50A collector current Low switching losses High s
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
Favorite
MODULE
Eupec
IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate
Description: BSM50GD120DN2E is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: 1200V blocking voltage 50A collector current Low switching losses Low noise Hig
Stock:2000
Minimum:1
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MODULE
Eupec
14+
IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate
Description: The BSM50GD120DN2E3226 is a 1200V/50A IGBT module from EUPEC. Features: 1200V/50A IGBT module Low loss High power density Low switching losses Low EMI High surge capabi
Stock:9991
Minimum:1
Favorite
MODULE
Eupec
14+
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
BSM50GD120DN2_B10 is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. It is a high power module with a maximum current rating of 1200A and a maximum voltage rating of 1200V. I
Stock:9999
Minimum:1
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Stock:10000
Minimum:1
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MODULE
Eupec
12+
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: BSM50GD120DN2G is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by EUPEC. Features: 1200V blocking voltage 50A collector current Low switching losses High s
Stock:9993
Minimum:1
Favorite
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