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Country CodeSIEMENS
INFINEON
Your search BUP314 and relate product result :8 items
Description: Power Transistor Features: High DC current gain Low collector-emitter saturation voltage Low noise Wide area of safe operation Overvoltage protection Short circuit protection
Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Stock:23
Minimum:1
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Description: NPN Silicon Power Transistor Features: High Voltage: VCEO = 800V High Speed Switching Low Saturation Voltage: VCE(sat) = 1.2V(Max) @ IC = 10A High DC Current Gain: hFE = 200 (
Stock:448
Minimum:1
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TO-3P
Inf/sie
00+
IGBT High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated
Description: NPN Silicon Power Transistor Features: - High DC Current Gain - Low Collector-Emitter Saturation Voltage - High Power Dissipation - High Reliability - Low Noise - High Voltage Applicatio
Stock:5000
Minimum:1
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TO3P
Siemens
02+
IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode
Description: NPN Silicon Power Transistor Features: High voltage capability Low collector-emitter saturation voltage High switching speed High current gain Low noise High reliability Low therma
Stock:10000
Minimum:2
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Stock:139
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company