FS100R12KT4G
MODULE
Infineon Technologies AG
2020+
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Your search FS100R12KT4G and relate product result :10 items
Stock:99
Minimum:1
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Description: Infineon IGBT Module Features: - 1200V blocking voltage - 100A continuous current - Low switching losses - High short circuit capability - Low EMI Application: The FS100R12KT4G is a hig
Stock:2870
Minimum:1
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MODULE
Infineon Technologies AG
EconoPACK3 module with trench/fieldstop IGBT4 and EmCon4 diode
Description: Infineon IGBT Module Features: - 1200V blocking voltage - 100A continuous current - Low switching losses - High short circuit capability - Low EMI Application: The FS100R12KT4G is a hig
Stock:2000
Minimum:1
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MODULE
Infineon Technologies AG
13+
EconoPACK3 module with trench/fieldstop IGBT4 and EmCon4 diode
Description: Infineon IGBT Module Features: - 1200V blocking voltage - 100A continuous current - Low switching losses - High short circuit capability - Low EMI Application: The FS100R12KT4G is a hig
Stock:10000
Minimum:1
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Stock:50
Minimum:1
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Description: This is a three-phase insulated gate bipolar transistor (IGBT) module from FUJI Electric. Features: This module has a voltage rating of 1200V and a current rating of 100A. It has a
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company