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Country CodeINTERNATIONAL RECTIFIER
Your search G4BC40F and relate product result :9 items
TO-220
International Rectifier
00+
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
Description: The G4BC40F is a high voltage, high speed, NPN silicon power transistor. Features: - High voltage: VCEO = 400V - High speed: tF = 0.3μs - Low saturation voltage: VCE(sat) = 1.2V (max) -
Stock:10000
Minimum:2
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TO-220
International Rectifier
1208+1209+
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
Description: This is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It is a TO-220 package with a voltage rating of 600V and a current rating of 40A. Features:
Stock:10000
Minimum:2
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TO-220
International Rectifier
2002
INSULATED GATE BIPOLAR TRANSISORVces=600V, Vceontyp.=1.50V, @Vge=15V, Ic=27A
Description: This is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It is a TO-220 package with a voltage rating of 600V and a current rating of 40A. Features:
Stock:10000
Minimum:2
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Stock:12
Minimum:2
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Description: This is a high-speed insulated gate bipolar transistor (IGBT) module with a maximum collector current of 400A and a maximum collector-emitter voltage of 600V. Features: Low on-state vol
Stock:970
Minimum:3
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Stock:135
Minimum:2
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TO-220
International Rectifier
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
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