≥1:
US $2.93370
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeINTERNATIONAL RECTIFIER
Your search G4PC50F and relate product result :12 items
Description: G4PC50F is a N-channel enhancement mode MOSFET produced by Toshiba. Features: - Low on-resistance - High-speed switching - Low input capacitance - High-voltage withstand Applications: -
Stock:10000
Minimum:2
Favorite
Description: The G4PC50F is a N-channel enhancement mode power MOSFET produced using the advanced PowerMESH process. Features: - Low on-resistance - Low gate charge - Fast switching - Avalanche rated
Stock:10000
Minimum:2
Favorite
Stock:3
Minimum:3
Favorite
TO-247
Ir/visay
INSULATED GATE BIPOLAR TRANSISTORVces=600V, Vceontyp.=1.45V, @Vge=15V, Ic=39A
Description: This is a IGBT Transistor manufactured by IR/VISAY. It is a TO-247 package and has a maximum collector current of 50A. Features: Low gate charge Low saturation voltage High speed swit
Stock:10000
Minimum:2
Favorite
TO-247
International Rectifier
2002
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEVces=600V, Vceontyp.=1.45V, @Vge=15V, Ic=39A
Description: This is a high voltage, high speed, insulated gate bipolar transistor (IGBT) module manufactured by International Rectifier. Features: Low saturation voltage High speed switching
Stock:10000
Minimum:2
Favorite
TO247
International Rectifier
03+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
Description: N-Channel Power MOSFET Features: - Low Gate Charge - Low On-Resistance - Fast Switching - Avalanche Rated Application: G4PC50FD is suitable for use in a wide range of application
Stock:10000
Minimum:2
Favorite
Stock:10000
Minimum:2
Favorite
TO-3P
International Rectifier
Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
Stock:10000
Minimum:2
Favorite
TO-247
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Description: IGBT Transistor, N-Channel, 600V, 50A, TO-247 Features: - High speed switching - Low gate charge - Low on-state resistance - Low inductance - High surge current capability Applications:
Stock:10000
Minimum:2
Favorite
Stock:2
Minimum:1
Favorite
Stock:1100
Minimum:10
Favorite
TO-247
International Rectifier
0425L+
Leaded 600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company