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Country CodeINTERNATIONAL RECTIFIER
INFINEON
Your search G4PF50WD and relate product result :12 items
Description: Power MOSFET Transistor Features: - N-Channel Enhancement Mode - Low On-Resistance - Fast Switching - High Avalanche Energy - High Voltage - Low Gate Charge - Low Input Capacitance - Low
Stock:10000
Minimum:2
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Description: N-Channel Power MOSFET Features: * Low On-Resistance * Low Gate Charge * Fast Switching * Avalanche Rated Applications: * Switching Applications * Motor Control * Power Supply * DC-DC C
Stock:10000
Minimum:2
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Stock:2789
Minimum:10
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TO-247
International Rectifier
00+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Description: This is an insulated gate bipolar transistor (IGBT) module manufactured by International Rectifier (IR). It is a three-terminal device with a TO-247 package. Features: Low gate charge
Stock:10000
Minimum:2
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Stock:2050
Minimum:5
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Description: The IRG4PF50WDPBF is a 600V, 50A, N-Channel IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies AG. Features: - Low gate charge - High speed switching - Low on-sta
Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Stock:550
Minimum:1
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Stock:2030
Minimum:10
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Stock:1556
Minimum:10
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company