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Country CodeTOSHIBA
Your search GT40Q321 and relate product result :9 items
GT40Q321 is a NPN silicon power transistor manufactured by Toshiba. Features: High collector-emitter voltage: VCEO = 400V High collector current: IC = 40A Low saturation voltage: VCE(sat) =
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GT40Q321 is a NPN silicon power transistor manufactured by Toshiba. Features: High collector-emitter voltage: VCEO = 400V High collector current: IC = 40A Low saturation voltage: VCE(sat) =
Stock:10000
Minimum:2
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Stock:8885
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Stock:8892
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Stock:2000
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Stock:30
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Stock:7825
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company