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Country CodeTOSHIBA
Your search GT50J301 and relate product result :7 items
Description: GT50J301 is a NPN silicon power transistor manufactured by Toshiba. Features: High breakdown voltage High collector current High power dissipation Low collector-emitter satur
Stock:10000
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Description: GT50J301 is a NPN silicon power transistor manufactured by Toshiba. Features: High breakdown voltage High collector current High power dissipation Low collector-emitter satur
Stock:10000
Minimum:2
Favorite
Stock:10000
Minimum:1
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The GT50J301 is a N-channel enhancement mode vertical DMOS transistor in a TO-3PL package. It is designed for use in high-power switching applications such as motor control, lighting, and power suppli
Stock:10000
Minimum:1
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Stock:11
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company