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Country CodeFAIRCHILD
ON SEMICONDUCTOR
Your search HGTG30N60A4D and relate product result :14 items
TO-3P
FAI
04+
The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
Description: This is an IGBT Discrete designed in a TO-3P package. It is based on the Field-Stop Trench design and features a 600V blocking voltage. Features: - Low saturation voltage: Vce(sat) = 2.1
Stock:10000
Minimum:2
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Stock:5000
Minimum:10
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Stock:1795
Minimum:5
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Description: IGBT Transistor Features: * 600V N-Channel IGBT * Low Gate Charge * Low Saturation Voltage * High Speed Switching Applications: * Motor Control * Switching Power Supplies * Uninterrupti
Stock:21144
Minimum:2
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Stock:10000
Minimum:2
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TO-3P
FSC
16+
The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
Description: 600V, 30A, N-Channel IGBT Features: - Low gate charge - Low saturation voltage - High speed switching - High input impedance - Low thermal resistance - High current carrying capability A
Stock:5000
Minimum:1
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TO-3P
On Semiconductor
Trans IGBT Chip N-CH 600V 70A 463mW 3-Pin(3+Tab) TO-247 Tube
Description: This is an N-Channel IGBT (Insulated Gate Bipolar Transistor) with a TO-3P package. Features: Low gate charge Low on-state resistance High speed switching High surge current capabilit
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Stock:50001
Minimum:10
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Stock:50000
Minimum:10
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Stock:50000
Minimum:10
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Stock:2000
Minimum:5
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Stock:10000
Minimum:2
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Description: HGTG30N60A4D is a high voltage N-channel IGBT (Insulated Gate Bipolar Transistor) manufactured by Fairchild Semiconductor. It is designed for high power switching applications. Features:
Stock:10000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company