IHW20N120R3
TO3P
Infineon Technologies AG
1345+
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeINFINEON
Your search IHW20N120R3 and relate product result :14 items
Stock:183
Minimum:1
Favorite
Stock:2109
Minimum:10
Favorite
Stock:5895
Minimum:5
Favorite
Description: IHW20N120R3 is a 1200V N-channel insulated gate bipolar transistor (IGBT) manufactured by Infineon. Features: Low conduction losses Low switching losses Low gate charge High speed sw
Stock:10000
Minimum:2
Favorite
Stock:10000
Minimum:2
Favorite
Stock:1130
Minimum:1
Favorite
Stock:3000
Minimum:5
Favorite
Description: N-Channel 1200V, 20A, TO-247 Power MOSFET Features: Low Gate Charge Low On-Resistance Avalanche Rugged Technology Improved dv/dt Capability Fast Switching Lead-Free RoHS Co
Stock:22
Minimum:2
Favorite
Description: The Infineon IHW20N120R3 H20R1203 TO-247 is a high-voltage, high-speed, insulated gate bipolar transistor (IGBT) module. It is designed for use in high-power switching applications such
Stock:10000
Minimum:2
Favorite
Description: The IHW20N120R3 is a N-channel MOSFET manufactured by Infineon Technologies. It is a high voltage MOSFET with a maximum drain-source voltage of 1200V. Features: Low gate charge Low gat
Stock:10000
Minimum:2
Favorite
Stock:2000
Minimum:5
Favorite
Stock:21160
Minimum:1
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company