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Country CodeINTERNATIONAL RECTIFIER
VISHAY
Your search IRFB18N50K and relate product result :9 items
Description: This is an N-channel MOSFET transistor manufactured by International Rectifier. Features: Maximum Drain Source Voltage: 500 V Maximum Gate Source Voltage: ±20 V Maximum Drain Current:
Stock:10000
Minimum:2
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Stock:1790
Minimum:10
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Description: The IRFB18N50K is a N-Channel MOSFET with a maximum drain-source voltage of 500V, a maximum drain current of 18A, and a maximum power dissipation of 150W. Features: Low on-resistance L
Stock:20994
Minimum:2
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Stock:1035
Minimum:2
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Description: This is a N-channel MOSFET transistor made by Vishay. It has a maximum drain-source voltage of 500V and a maximum drain current of 18A. Features: Low on-resistance Low gate charge Fas
Stock:5000
Minimum:1
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Stock:5000
Minimum:10
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Stock:3000
Minimum:5
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TO-220
International Rectifier
HEXFET Power MOSFETSMPSHEXFET MOS
Stock:10000
Minimum:2
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Stock:5000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company