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Country CodeINFINEON
Your search K25T1202 and relate product result :7 items
Description: The K25T1202 is an N-channel MOSFET from Infineon Technologies. It is a high-voltage, high-speed, low-on-resistance device that is suitable for use in a variety of applications, including
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Description: The K25T1202 is a three-phase, insulated gate bipolar transistor (IGBT) module from Infineon Technologies. Features: Low switching losses Low EMI Low gate charge High current capabil
Stock:20679
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company