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Country CodeSHINDENGEN
Your search MCZ3001D and relate product result :17 items
The MCZ3001D is a high-performance, low-cost monolithic dual N-channel enhancement-mode power field-effect transistor (FET). It is designed for high-speed switching applications, and is housed in a DI
Stock:10000
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Description: MCZ3001D is a NPN silicon epitaxial planar transistor manufactured by Shindeng. Features: - High current gain - Low collector-emitter saturation voltage - High switching speed - Low nois
Stock:10000
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Stock:1
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Stock:8561
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Description: MCZ3001D is a high-voltage, high-speed switching NPN transistor in a plastic package. Features: High voltage: VCEO = 600V High speed switching: tF = 0.3μs Low collector-emitter satura
Stock:23194
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DIP-18
Shindeng
04+
Shindengen Electronic Corporation Japan MCZ3001D - TV Signal Processors and Tuners
Description: MCZ3001DA is a low-voltage, high-speed, low-power, dual N-channel MOSFET. Features: Low on-resistance Low gate charge Low input capacitance Low threshold voltage High-spee
Stock:10000
Minimum:1
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DIP-18
Shindengen
Shindengen Electronic Corporation Japan MCZ3001D - TV Signal Processors and Tuners
Description: The MCZ3001DB is a three-terminal monolithic NPN power transistor designed primarily for use in power linear and switching applications. Feature: High hFE Low saturation voltage High br
Stock:10000
Minimum:2
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Stock:5000
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Description: The MCZ3001DB is a dual N-channel enhancement mode MOSFET in a small surface mount package. Features: - Low On-Resistance - Low Input Capacitance - Low Gate Charge - Low Threshold Voltag
Stock:2143
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Stock:5391
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Stock:340
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Stock:257
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Description: MCZ3001DB is a high-voltage NPN silicon transistor manufactured by Shindengen. Features: - High voltage: VCBO = 600V - High current: IC = 3A - Low saturation voltage: VCE(sat) = 0.7V - H
Stock:75
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Stock:150
Minimum:2
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