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Country CodeYour search MG100Q1JS9 and relate product result :2 items
MODULE
Toshiba America Electronic Components
TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG100Q1JS9 is a high voltage insulated gate bipolar transistor (IGBT) module with a maximum collector emitter voltage of 1200V. Features: - Low collector-emitter saturation voltage -
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