≥1:
US $26.71500
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeMITSUBISHI
Your search RD100HHF1 and relate product result :6 items
RF TRANSISTOR
Mitsubis
MOS FET type transistor specifically designed for HF High power amplifiers applications.
Description: The RD100HHF1 is a 100W, 50V, N-Channel Enhancement Mode Power MOSFET from Mitsubishi. Features: Low On-Resistance Low Gate Charge Low Input Capacitance Fast Switching Avalanche Rat
Stock:2000
Minimum:1
Favorite
三菱
MOS FET type transistor specifically designed for HF High power amplifiers applications.
Stock:2000
Minimum:1
Favorite
Description: RD100HHF1C is a ceramic RF power transistor manufactured by Mitsubishi. Features: High power gain Low noise High efficiency High frequency operation Low distortion Hig
Stock:294
Minimum:1
Favorite
N/A
Mitsubis
MOS FET type transistor specifically designed for HF High power amplifiers applications.
Description: The RD100HHF1-101 is a 100 watt, high-power, high-frequency, N-channel power MOSFET transistor manufactured by Mitsubishi. Features: High-power, high-frequency N-channel power MOSFET
Stock:2000
Minimum:1
Favorite
HF HIGH POWER
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company