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Country CodeINFINEON
Your search SKW30N60HS and relate product result :4 items
TO-247
Infinion
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: HighSpeed 30-100 kHz; Package: TO-247; VCE max: 600.0 V; ICmax @ 25°: 41.0 A; ICmax @ 100°: 30.0 A
Description: SKW30N60HS is a N-channel MOSFET produced by Infineon Technologies. It is a high-speed MOSFET with a maximum drain-source voltage of 600V and a maximum drain current of 30A. Features: L
Stock:10000
Minimum:2
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TO-247
Infineon Technologies AG
0204+
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: HighSpeed 30-100 kHz; Package: TO-247; VCE max: 600.0 V; ICmax @ 25°: 41.0 A; ICmax @ 100°: 30.0 A
Description: N-Channel MOSFET, 600V, 30A, TO-247 Features: Low gate charge Low on-state resistance Avalanche rated High temperature operation RoHS compliant Halogen free Applications
Stock:5000
Minimum:1
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Stock:20372
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company