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Home > Elec-component > Modules > IGBT
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MODULE
Infineon Technologies AG
EconoPIM? 3 1200 V, 50 A three phase PIM IGBT module with low sat & fast TRENCHSTOP? IGBT3 and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. They are available in Econo2 and Econo3 housing and also available with Solder- or PressFIT pins.
Description: Infineon IGBT Module Features: - 1200V blocking voltage - 50A continuous current - Low switching losses - High frequency operation - Low EMI - Short circuit withstand capability - Low gat
Stock:2000
Minimum:1
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SKM145GB066D is a module manufactured by Semikon. It is a three-phase bridge rectifier module with a rated current of 145A and a maximum reverse voltage of 600V. It is designed for use in motor drives
Stock:2000
Minimum:1
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Description: The BSM300GA120DN2SE3256 is a three-phase, insulated-gate bipolar transistor (IGBT) module from Semikron. It is designed for use in motor drives, welding machines, and other industrial ap
Stock:2000
Minimum:1
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MODULE
Infineon Technologies AG
04+
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
The Infineon BSM100GB120DN2E3256 is a 1200V/100A IGBT module designed for high power switching applications. It features a high power density, low switching losses, and a high current carrying capacit
Stock:2000
Minimum:1
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MODULE
Infineon Technologies AG
Elektrische Eigenschaften / Electrical properties
FP50R12KS4C is a power module manufactured by Infineon Technologies. It is an insulated gate bipolar transistor (IGBT) module with a maximum current rating of 50A and a maximum voltage rating of 1200V
Stock:2000
Minimum:1
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MODULE
Toshiba
Silicon N-channel IGBT GTR module for high power switching, motor control applications
Description: Toshiba 75A, 2-Phase, Brushless DC Motor Driver Module Features: High-efficiency, low-loss power module Built-in protection circuit Over-current protection Over-voltage p
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Modules up to 1200V PIM; Package: AG-EASY2-1; IC max: 10.0 A; VCEsat typ: 1.9 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EasyPIM? 2;
Description: The FP10R12YT3 is an insulated-gate bipolar transistor (IGBT) module manufactured by Eupec. It is a three-phase inverter module with a nominal current rating of 10A and a maximum voltage
Stock:2000
Minimum:1
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Description: The SKM195GB126DN is a three-phase bridge rectifier module from Semikron. Features: 1200V blocking voltage Low forward voltage drop High surge current capability Low thermal resista
Stock:2000
Minimum:1
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MODULE
Eupec
62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode
The FZ900R12KF5 is a 1200V, 900A, IGBT module manufactured by EUPEC. It is designed to be used in high-power applications such as motor drives, UPS systems, and solar inverters. Features: 1200V, 900
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Modules up to 1200V PIM; Package: AG-ECONO2-1; IC max: 40.0 A; VCEsat typ: 1.8 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3; Housing: EconoPIM™ 2;
Description: The FP40R12KE3 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a three-phase inverter module with a maximum blocking voltage of 1200V. Features: Maximum blocking
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Stock:2000
Minimum:1
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Description: The FSAM10SH60A is a 600V, 10A, single Insulated N-Channel IGBT Module. Features: High Voltage Rating of 600V High Speed Switching of 10A High Deflection Voltage High Short Circuit W
Stock:5000
Minimum:1
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SKM150GB12V is a module manufactured by Semikron. It is a thyristor/diode module with a blocking voltage of 1200V and a current rating of 150A. It is designed for use in high-power switching applicati
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: The BSM50GD120DN2-B10 is an insulated gate bipolar transistor (IGBT) module from EUPEC. It is a 1200V, 50A device with a maximum junction temperature of 150°C. Features: 1200V blocking
Stock:2000
Minimum:1
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MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV VBRCES | 1.8KA IC
Stock:2000
Minimum:1
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The CM150DY-12H is a module manufactured by Mitsubishi. It is a power module designed for use in inverter circuits. It is a 150A, 1200V, N-channel IGBT module with a built-in fast recovery diode. It h
Stock:2000
Minimum:1
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Description: The FF200R12KE3 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a three-phase, full-bridge module with a maximum collector-emitter voltage of 1200V and a maximum c
Stock:2000
Minimum:1
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MODULE
Eupec
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
FS25R12W1T4 is an insulated-gate bipolar transistor (IGBT) module manufactured by Eupec. It is a three-phase inverter module with a maximum collector-emitter voltage of 1200V and a maximum collector c
Stock:2000
Minimum:1
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Description: The CM50MXB2-24A is a module from MIT that is designed for use in a wide range of applications. It is a 50A, 24V DC module with a maximum current of 50A and a maximum voltage of 24V DC.
Stock:2000
Minimum:1
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Description: This is a three-phase insulated gate bipolar transistor (IGBT) module from EUPEC. Features: 1200V blocking voltage 75A collector current Low on-state voltage drop High switching spee
Stock:2000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company
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