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Country CodeHITACHI
RENESAS
JSCJ
Your search 2SB647 and relate product result :28 items
Description: The 2SB647 is a PNP epitaxial planar silicon transistor manufactured by Hitachi. Features: - Low collector-emitter saturation voltage - High collector current - High gain Applications:
Stock:133
Minimum:9
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Stock:29200
Minimum:100
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Description: 2SB647 is a PNP silicon epitaxial transistor manufactured by Hitachi. Features: Low collector-emitter saturation voltage High current gain High breakdown voltage High switching spee
Stock:10000
Minimum:4
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2SB647 is a PNP transistor manufactured by Hitachi. It is a low-power, low-voltage transistor with a maximum collector current of 600mA. It is commonly used in audio amplifiers, power supplies, and ot
Stock:10000
Minimum:3
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Stock:500
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Stock:198
Minimum:7
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Description: PNP Transistor Features: High DC Current Gain Low Collector-Emitter Saturation Voltage Low Noise High Reliability Applications: Audio Amplifier Switching General
Stock:743
Minimum:7
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Stock:2247
Minimum:23
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Description: 2SB647A is a PNP silicon epitaxial transistor manufactured by Hitachi. Features: * High DC current gain * Low collector-emitter saturation voltage * High breakdown voltage Applications:
Stock:10000
Minimum:13
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Description: 2SB647-C is a PNP silicon epitaxial transistor manufactured by Hitachi. Features: -High breakdown voltage -High current gain -High switching speed -Low collector-emitter saturation volta
Stock:10000
Minimum:3
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Description: The 2SB647A is a PNP silicon transistor manufactured by Hitachi. Features: - High current capacity - Low collector-emitter saturation voltage - Low noise - High gain Applications: - Aud
Stock:10000
Minimum:5
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Description: The 2SB647C is a PNP silicon epitaxial transistor manufactured by Jiangsu Changjiang Electronics Technology Co Ltd. It is designed for use in general purpose amplifier and switching appli
Stock:10000
Minimum:4
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Description: 2SB647AC is a PNP silicon epitaxial transistor manufactured by Hitachi Ltd. Features: Low collector-emitter saturation voltage High current gain High frequency operation High breakd
Stock:10000
Minimum:4
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Stock:10000
Minimum:3
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Stock:10000
Minimum:4
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Stock:5000
Minimum:11
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Stock:5000
Minimum:11
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Stock:5000
Minimum:11
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Description: The 2SB647-D is a PNP silicon epitaxial transistor manufactured by Hitachi. Features: - Low collector-emitter saturation voltage - High current gain - High breakdown voltage - Low nois
Stock:4967
Minimum:11
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Stock:5000
Minimum:8
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