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Country CodeHITACHI
Your search 2SD756 and relate product result :9 items
Description: 2SD756 is a NPN silicon epitaxial transistor manufactured by Hitachi. Features: Low collector-emitter saturation voltage High current gain High breakdown voltage High switching speed
Stock:10000
Minimum:13
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Description: NPN Epitaxial Planar Silicon Transistor Features: Low collector saturation voltage High current gain High frequency High reliability Applications: Audio frequency amplifie
Stock:10000
Minimum:13
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Manufacturer: HITACHI Package: TO92L Description: 2SD756 is a NPN silicon epitaxial transistor designed for use in low-frequency power amplifiers and drivers. Features: Low collector-emitter satura
Stock:1921
Minimum:13
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Description: 2SD756-AD is a NPN bipolar junction transistor (BJT) manufactured by Hitachi. Features: Collector-Emitter Voltage: Vceo = 30V Collector-Base Voltage: Vcbo = 40V Emitter-Base Voltage:
Stock:10000
Minimum:2
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Description: 2SD756AD is a NPN silicon epitaxial planar transistor manufactured by Hitachi. Features: High DC current gain Low collector-emitter saturation voltage High breakdown voltage
Stock:4970
Minimum:11
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Description: 2SD756-AD is a NPN bipolar junction transistor (BJT) manufactured by Hitachi. Features: Collector-Emitter Voltage: Vceo = 30V Collector-Base Voltage: Vcbo = 40V Emitter-Base Voltage:
Stock:4987
Minimum:11
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Description: NPN Silicon Transistor Features: High DC Current Gain High Transition Frequency Low Collector-Emitter Saturation Voltage High Collector-Emitter Voltage Application: Audio
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