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Country CodeFUJITSU
Your search FMH23N50E and relate product result :13 items
Description: This is a N-channel MOSFET transistor manufactured by Fuji Electric. It has a maximum drain-source voltage of 500V and a maximum drain current of 23A. Feature: Low on-resistance Low gat
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Description: FMH23N50E is a N-channel MOSFET transistor manufactured by Fuji Electric. It has a maximum drain-source voltage of 500V and a maximum drain current of 23A. Features: Low on-resistanc
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Description: The FMH23N50E is a N-channel enhancement mode power MOSFET with a maximum drain source voltage of 500V and a maximum drain current of 23A. It is designed for use in high-voltage switching
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Package: TO-3P Manufacturer: FUJI Description: The FMH23N50ESCQ-P is a high voltage N-channel MOSFET with a drain-source voltage of 500V, a drain current of 23A, and a gate-source voltage of ±20V. F
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