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Country CodeFUJITSU
Your search 2MBI50N-120 and relate product result :4 items
2MBI50N-120 is an insulated gate bipolar transistor (IGBT) module manufactured by Fuji Electric. It is a high-speed switching device with a maximum collector-emitter voltage of 1200V and a collector c
Stock:2000
Minimum:1
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2MBI50N-120 is a module manufactured by Fuji Electric. It is an IGBT module with a rated current of 50A and a rated voltage of 1200V. It is designed for use in power conversion applications such as mo
Stock:2000
Minimum:1
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2MBI50N-120 is a module manufactured by Fuji Electric. It is an IGBT module with a rated current of 50A and a rated voltage of 1200V. It is designed for use in power conversion applications such as mo
Stock:37564
Minimum:1
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company