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Country CodeINFINEON
Your search BTS410E2 and relate product result :9 items
TO-220-5
Infineon Technologies AG
00+
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
Description: N-channel enhancement mode vertical DMOS FET Features: - Low RDS(on) - Low gate charge - Low input and output capacitance - Positive temperature coefficient on RDS(on) Application: Gener
Stock:10000
Minimum:2
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TO-263
Infineon Technologies AG
00+
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
The BTS410E2E3062 is a N-channel enhancement mode vertical power MOSFET from Infineon Technologies. It is a TO-263 package and is suitable for use in high-side switching applications. Features: * Low
Stock:10000
Minimum:2
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TO-220-5
Infineon Technologies AG
00+
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
Description: The BTS410E2E3043 is an N-channel logic level enhancement mode power field effect transistor (FET) in a TO-220-5 package. Features: * Low on-state resistance * Low gate charge * High cur
Stock:10000
Minimum:1
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Description: The BTS410E2 is a N-channel enhancement mode vertical power MOSFET from Infineon Technologies. It is designed for use in high-side load switch applications. Features: Low on-resistanc
Stock:10000
Minimum:2
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Description: The BTS410E2E3062A is a N-channel logic level enhancement mode power field-effect transistor (FET) from Infineon. Features: * Low on-state resistance * Low gate charge * Fast switching *
Stock:10000
Minimum:2
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TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Infineon Technologies
IC HIGH SIDE PWR SWITCH T0263-5
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Description: BTS410E2E3043NKSA1 is a N-channel logic level enhancement mode power field-effect transistor (FET) manufactured by Infineon Technologies. Features: * Low on-state resistance (RDS(on))
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