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Country CodeINFINEON
EUPEC
Your search FB10R06KL4G and relate product result :12 items
Description: The FB10R06KL4G is a high-performance insulated gate bipolar transistor (IGBT) module from Eupec. It has a maximum blocking voltage of 600V, a maximum collector current of 10A, and a maxi
Stock:2000
Minimum:1
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Stock:2000
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Stock:10000
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Description: EUPEC IGBT Module Features: High speed switching Low saturation voltage Low gate charge Low on-state resistance High current capability High reliability High temperat
Stock:2000
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Description: FB10R06KL4G_B1 is a N-channel MOSFET with a low on-resistance and low gate charge. Features: Low on-resistance Low gate charge High-speed switching Low input capacitance Low output
Stock:2000
Minimum:1
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Description: Infineon FB10R06KL4G-B1 is a three-phase, full-bridge, insulated gate bipolar transistor (IGBT) module. Features: Low switching losses High blocking voltage Low gate charge Short cir
Stock:2000
Minimum:1
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Description: The FB10R06KL4G_B1 is an IGBT module from Infineon. Features: 600V blocking voltage 10A continuous current Low switching losses Low EMI Short circuit withstand capability
Stock:2000
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Description: The FB10R06KL4G-B1 is a three-phase bridge rectifier module from EUPEC. It is designed for use in motor drives, welding machines, and other applications requiring high power rectification
Stock:2000
Minimum:1
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Description: FB10R06KL4G_B1 is a N-channel MOSFET with a low on-resistance and low gate charge. Features: Low on-resistance Low gate charge High-speed switching Low input capacitance Low output
Stock:2000
Minimum:1
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Stock:10000
Minimum:1
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Description: EUPEC IGBT Module Features: High speed switching Low saturation voltage Low gate charge Low on-state resistance High current capability High reliability High temperat
Stock:10000
Minimum:1
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Stock:100
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