RJH60F7
TO3P
Renesas
11-21+
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Your search RJH60F7 and relate product result :16 items
Stock:1070
Minimum:10
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Description: The RJH60F7 is an IGBT module from Renesas that ensures high-density mounting and low power loss. Features: 600V collector-emitter voltage Low collector-emitter saturation voltage
Stock:10000
Minimum:2
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Description: The RJH60F7 is a high-speed, low-loss IGBT (Insulated Gate Bipolar Transistor) module from Renesas. Features: Low saturation voltage Low switching loss High speed switching Low noise
Stock:10000
Minimum:2
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Stock:14
Minimum:1
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Description: The RJH60F7ADPK is a high-speed, low-loss IGBT module with a built-in fast recovery diode. It is designed for use in applications such as motor control, power conversion, and inverter cir
Stock:4980
Minimum:10
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Stock:1900
Minimum:5
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Description: The RJH60F7DPQ is an IGBT module designed for use in motor control applications. It is a three-phase inverter module with a rated current of 600A and a maximum voltage of 600V. Features:
Stock:10000
Minimum:2
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Description: The RJH60F7ADPK is a high-speed, low-loss IGBT module with a built-in fast recovery diode. It is designed for use in applications such as motor control, power conversion, and inverter cir
Stock:10000
Minimum:2
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Stock:10000
Minimum:1
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Stock:10000
Minimum:1
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Stock:10000
Minimum:1
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Description: The RJH60F7DPQ is a high-speed IGBT (Insulated Gate Bipolar Transistor) module with a built-in anti-parallel diode. It is designed for use in high-frequency switching applications. Featu
Stock:10000
Minimum:1
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Stock:20476
Minimum:2
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TO-3P
Renesas Electronics
Trans IGBT Chip N-CH 600V 90A 328900mW 3-Pin(3+Tab) TO-3P Tube
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company