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Country CodeINFINEON
Your search 06N80C3 and relate product result :33 items
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Description: The 06N80C3 is a N-channel MOSFET designed for high-speed switching applications. Features: - Low on-resistance - Low gate charge - Low input capacitance - Fast switching - Low threshold
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Stock:84
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Description: The SPP06N80C3 is an N-channel enhancement mode power MOSFET developed using Infineon's advanced strip-based process technology. Features: - Low gate charge - Low on-state resistance - F
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Stock:1000
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Stock:2055
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TO-252
Infineon Technologies AG
07+
N-Channel MOSFETs >500V…900V; Package: PG-TO252-3; VDS max: 800.0 V; Package: DPAK TO-252; RDSON @ TJ=25°C VGS=10: 900.0 mOhm; IDmax @ TC=25°C: 6.0 A; IDpuls max: 18.0 A;
Description: N-channel 800 V, 0.065 Ω, 8 A, TO-252 (DPAK) Features: Low gate charge Low on-state resistance Fast switching Avalanche rated Lead-free, RoHS-compliant Halogen-free Applications: S
Stock:10000
Minimum:5
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TO220
Infineon Technologies AG
Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
Description: The SPP06N80C3 is a N-channel MOSFET with a maximum drain source voltage of 800V and a maximum drain current of 6A. Features: Low gate charge Low on-state resistance High switching sp
Stock:10000
Minimum:2
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TO-220
Infineon Technologies AG
0624+
N-Channel MOSFETs >500V…900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220 FullPAK; RDSON @ TJ=25°C VGS=10: 900.0 mOhm; IDmax @ TC=25°C: 6.0 A; IDpuls max: 18.0 A;
Stock:10000
Minimum:2
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Description: N-channel 800 V, 0.065 Ω, 8 A, TO-252 (DPAK) Features: Low gate charge Low on-state resistance Fast switching Avalanche rated Lead-free, RoHS-compliant Halogen-free Applications: S
Stock:5000
Minimum:1
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Stock:10000
Minimum:2
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Stock:9
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Stock:535
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Stock:31
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Stock:84
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company