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Country CodeFAIRCHILD
INFINEON
STMICROELECTRONICS
MAGNACHIP
IXYS
UNISONIC TECHNOLOGIES
ON SEMICONDUCTOR
ALPHA & OMEGA SEMICONDUCTOR
FUJITSU
NEC
SILAN MICROELECTRONICS
Your search 10N60 and relate product result :438 items
TO220
STMicroelectronics
14+
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Description: 10N60 is a N-channel MOSFET transistor manufactured by STMicroelectronics. Features: Low on-resistance Low gate charge Low input capacitance Fast switching Avalanche rated
Stock:10000
Minimum:5
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Description: The 10N60 is a N-channel MOSFET with a maximum drain-source voltage of 600V and a maximum drain current of 10A. Features: Low gate charge Low on-state resistance Fast switching Avala
Stock:10000
Minimum:3
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Stock:7
Minimum:5
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Stock:952
Minimum:20
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Stock:10
Minimum:2
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Stock:2286
Minimum:2
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Stock:10
Minimum:3
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Stock:65
Minimum:2
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Stock:50
Minimum:2
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Stock:88
Minimum:4
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Description: N-Channel MOSFET Features: - Low On-Resistance - Low Gate Charge - Fast Switching - Avalanche Energy Rated - RoHS Compliant Applications: - DC-DC Converters - Motor Control - Load Switchi
Stock:10000
Minimum:5
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TO-220F
Magnachip Semiconductor
12+
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Stock:10000
Minimum:5
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TO-220
Fairchild
1140+
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Description: N-Channel MOSFET Transistor Features: Low Gate Charge Fast Switching Low On-Resistance Avalanche Energy Rated RoHS Compliant Halogen Free Applications: Automotive Switching Power
Stock:10000
Minimum:2
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TO-220
Infineon Technologies AG
0427+
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Stock:10000
Minimum:5
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Description: The FQP10N60C is a N-Channel MOSFET with a maximum drain source voltage of 600V and a maximum drain current of 10A. Features: Low gate charge Low on-state resistance Fast switch
Stock:10000
Minimum:10
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TO-220F
UTC
13+
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Description: 10N60L is a N-channel MOSFET developed by United Technologies Corporation (UTC). It is designed for high-speed switching applications. Features: - Low on-resistance - Low gate charge - L
Stock:10000
Minimum:6
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Description: N-Channel Enhancement Mode MOSFET Features: - Low On-Resistance - Low Gate Charge - Low Input Capacitance - Avalanche Ruggedness - High Speed Switching - Fully Characterized Capacitance a
Stock:10000
Minimum:2
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TO-220
Infineon Technologies AG
07+
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode NPT S-IGBT
Stock:10000
Minimum:2
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TO-247
IXYS
00+
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
Description: IXGH10N60AU1 is a 600V, 10A, N-channel IGBT from IXYS. Features: Low on-state voltage Low gate charge Low switching losses High current capability High speed switching High surge ca
Stock:10000
Minimum:2
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TO-220
Infineon Technologies AG
03+
IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: TO-220; VCE max: 600.0 V; ICmax @ 25°: 20.0 A; ICmax @ 100°: 10.0 A
Description: Infineon IKP10N60T is a N-channel MOSFET with a TO-220 package. Features: Low on-state resistance Low gate charge Low threshold voltage Avalanche rated High current capability High
Stock:10000
Minimum:2
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company