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Country CodeINFINEON
Your search 17N80C3 and relate product result :55 items
TO-247
Infineon Technologies AG
N-Channel MOSFETs >500V?900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Description: The 17N80C3 is an N-channel MOSFET transistor manufactured by Infineon Technologies. It is designed for high-speed switching applications. Features: High-speed switching Low on-state r
Stock:10000
Minimum:1
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Stock:1965
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TO-247
Infineon Technologies AG
17+
N-Channel MOSFETs >500V?900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Stock:10000
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Stock:8000
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Stock:4
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Stock:15
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Description: The SPP17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-voltage, high-speed power MOSFET with an integrated Schottky diode. Features: Low on-state resistance
Stock:216
Minimum:2
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Stock:5590
Minimum:5
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Stock:13000
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Stock:899
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Description: The SPW17N80C3 is an N-channel MOSFET from Infineon Technologies. This device is designed for use in high-side switching applications. It features a low on-resistance of 17 mΩ and a maxim
Stock:377
Minimum:1
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TO-220
Infineon Technologies AG
N-Channel MOSFETs >500V?900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
DESCRIPTION: SPP17N80C3 is a N-channel power MOSFET produced by Infineon, with a package type of TO-220. FEATURES: Low gate charge Low On-Resistance Improved Power Loss High Avalanche Ruggednes
Stock:10000
Minimum:2
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Description: The SPB17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-performance, low-on-resistance, and low-gate charge device designed for use in high-efficiency switching a
Stock:10000
Minimum:2
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TO220F
Infineon Technologies AG
N-Channel MOSFETs >500V…900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220 FullPAK; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Description: N-Channel MOSFET Transistor Features: - Low gate charge - Low on-resistance - Low input and output capacitance - Fast switching - RoHS Compliant Applications: - DC/DC converters - Motor
Stock:10000
Minimum:2
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TO-247
Infineon Technologies AG
05+
N-Channel MOSFETs >500V?900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Description: The SPW17N80C3 is a N-channel MOSFET from Infineon Technologies. Features: * 800V drain-source voltage * 17A continuous drain current * Low gate charge * Low on-resistance * Avalanche-ra
Stock:10000
Minimum:1
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Stock:13008
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Stock:1241
Minimum:10
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Stock:3000
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Stock:167
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Stock:28882
Minimum:20
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