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Country CodeMITSUBISHI
Your search 2SC1947 and relate product result :5 items
CAN-3P
Mitsubishi
53P
NPN EPITAXIAL PLANAR TYPEfor industrial use RF power amplifiers on VHF band Mobile radio applications
Description: The 2SC1947 is a NPN epitaxial silicon transistor manufactured by Mitsubishi. Features: High breakdown voltage High current gain Low collector-emitter saturation voltage High switchi
Stock:5000
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CAN-3
Mitsubishi
NPN EPITAXIAL PLANAR TYPEfor industrial use RF power amplifiers on VHF band Mobile radio applications
2SC1947 is a NPN silicon epitaxial transistor manufactured by Mitsubishi. It is designed for use in audio frequency amplifier and general purpose applications. Description: The 2SC1947 is a NPN silic
Stock:10000
Minimum:1
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Stock:9
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2SC1947 is a NPN epitaxial planar silicon transistor manufactured by Toshiba. It is mainly used for low frequency power amplification and switching applications. Features: -High current gain -Low col
Stock:305
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2SC1947 is a NPN epitaxial planar silicon transistor manufactured by Toshiba. It is mainly used for low frequency power amplification and switching applications. Features: -High current gain -Low col
Stock:310
Minimum:1
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