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Country CodeMITSUBISHI
Your search 2SC3102 and relate product result :12 items
2SC3102 is a high-frequency power module manufactured by MIT. The module is mainly composed of 2SC3102 RF power transistor, 2 series diodes, bias resistor and heat sink. Description: 2SC3102 is a hig
Stock:2000
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HF power module
Mitsubishi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3102 is a HF power module manufactured by Mitsubishi. It is a NPN silicon epitaxial planar transistor designed for use in high frequency power amplifiers. Features: * High breakdown voltage * Low
Stock:2000
Minimum:1
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HF power module
Mitsubishi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Description: The 2SC3102 is a HF power module manufactured by Mitsubishi. It is a high-power transistor designed for use in radio frequency (RF) applications. Features: - High-power transistor -
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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2SC3102 is a NPN silicon epitaxial transistor manufactured by Mitsubishi. It is designed for use in HF high power applications. Description: 2SC3102 is a NPN silicon epitaxial transistor designed fo
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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2SC3102 is a NPN epitaxial planar type transistor manufactured by Mitsubishi Electric. It is designed for use in RF power amplifiers and oscillators in the frequency range of 10MHz to 500MHz. Feature
Stock:5000
Minimum:1
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2SC3102 is a high-power NPN silicon transistor manufactured by Toshiba. It is designed for use in audio amplifiers and other general purpose applications. Description: The 2SC3102 is a high-power NP
Stock:2000
Minimum:1
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2SC3102 is a NPN silicon epitaxial transistor manufactured by Mitsubishi. It is designed for use in HF high power applications. Description: 2SC3102 is a NPN silicon epitaxial transistor designed fo
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