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Country CodeRENESAS
MITSUBISHI
Your search BCR12PM and relate product result :18 items
Description: BCR12PM is a 12A, 100V, NPN, Darlington, TO220F package, transistor. Features: High DC current gain High collector-emitter voltage Low saturation voltage High switching speed Low c
Stock:10000
Minimum:2
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Stock:45
Minimum:3
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Stock:1552
Minimum:10
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Description: BCR12PM-12L is a 12A/400V three-terminal standard gate trigger thyristor manufactured by Renesas. Features: Low on-state voltage drop High surge current capability Low gate trigger
Stock:340
Minimum:3
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Stock:2795
Minimum:5
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TO-220F
Renesas
Low Power Use Insulated Type, Planar Passivation Type Triac
Description: The BCR12PM-12L is a 12A, 600V NPN bipolar transistor manufactured by Renesas. It is a three-terminal device with an integrated base-emitter resistor. Features: Low collector-emitter s
Stock:10000
Minimum:2
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Description: BCR12PM-12L is a 12A/600V NPN transistor manufactured by MIT. Features: High current gain High voltage rating Low saturation voltage High switching speed Low power dissipation Hig
Stock:10000
Minimum:2
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TO220
Renesas Electronics Corporation
11+
800V, 12A, TRIAC, TO-220AB, SC-67, TO-220F, 3 PIN
Description: BCR12PM-14LG is a 12A, 400V NPN Darlington transistor manufactured by Renesas Electronics Corporation. Features: - High DC current gain - Low saturation voltage - High voltage and high c
Stock:10000
Minimum:2
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Stock:980
Minimum:3
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Stock:21815
Minimum:3
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Stock:52
Minimum:3
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Stock:1990
Minimum:10
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Description: BCR12PM-12 is a 12A, 600V, NPN, three-terminal, surface mount, insulated type, fast switching, high voltage transistor produced by Mitsubishi Electric. Features: High voltage, high s
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