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Manufacturer:

NXP

PHILIPS

Whether to use: New Used

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BLF177

TO-59

Philips

0103+

HF/VHF power MOS transistorHF/VHF MOS

Utsource Original Store

≥1:

US $125.73000

US $113.15700

≥2:

US $125.73000

US $113.15700

≥5:

US $117.34800

US $105.61320

≥10:

US $117.34800

US $105.61320

≥20:

US $117.34800

US $105.61320

≥30:

US $117.34800

US $105.61320

≥50:

US $117.34800

US $105.61320

≥100:

US $116.50980

US $104.85882

≥500:

US $115.67160

US $104.10444

From: US $115.67160

Description: The BLF177 is a N-channel enhancement mode field-effect transistor (FET) designed for RF power amplifiers in the frequency range of 0.8 to 2.5 GHz. Features: * Low noise figure * High ga

Stock:2000

Minimum:1

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Used and refurbished parts guaranteed can work well

BLF177

HF POWER MODULE

Philips

HF/VHF power MOS transistorHF/VHF MOS

Utsource

≥1:

US $44.34000

US $41.67960

≥2:

US $44.34000

US $41.67960

≥5:

US $42.86200

US $40.29028

≥10:

US $42.27080

US $39.73455

≥20:

US $41.97520

US $39.45669

≥30:

US $41.38400

US $38.90096

≥50:

US $41.38400

US $38.90096

≥100:

US $41.08840

US $38.62310

≥500:

US $40.79280

US $38.34523

From: US $40.79280

Description：BLF177 is an N-channel depletion mode RF power field effect transistor (power FET), which is designed for high power with applications in the HF/VHF amplifier/oscillator. Features: High

Stock:2000

Minimum:1

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Original parts, guaranteed brand new

BLF177

TO-59

Philips

0103+

SOUTHCHIP LIMITED

US $82.14360

US $77.21498

From: US $82.14360

Stock:3

Minimum:1

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Original parts, guaranteed brand new

BLF177C

TO-59

NXP Semiconductors

08+

HF/VHF power MOS transistorHF/VHF MOS

Utsource Original Store

≥1:

US $125.73000

US $113.15700

≥2:

US $125.73000

US $113.15700

≥5:

US $117.34800

US $105.61320

≥10:

US $117.34800

US $105.61320

≥20:

US $117.34800

US $105.61320

≥30:

US $117.34800

US $105.61320

≥50:

US $117.34800

US $105.61320

≥100:

US $116.50980

US $104.85882

≥500:

US $115.67160

US $104.10444

From: US $115.67160

Stock:2000

Minimum:1

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Quote

Enlarge

Original parts, guaranteed brand new

BLF177CR

TO-59

NXP Semiconductors

0821+

HF/VHF power MOS transistorHF/VHF MOS

Utsource Original Store

≥1:

US $125.73000

US $113.15700

≥2:

US $125.73000

US $113.15700

≥5:

US $117.34800

US $105.61320

≥10:

US $117.34800

US $105.61320

≥20:

US $117.34800

US $105.61320

≥30:

US $117.34800

US $105.61320

≥50:

US $117.34800

US $105.61320

≥100:

US $116.50980

US $104.85882

≥500:

US $115.67160

US $104.10444

From: US $115.67160

Stock:2000

Minimum:1

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Quote

Enlarge

Original parts, guaranteed brand new

BLF177C

TO-59

NXP Semiconductors

0846+

SOUTHCHIP LIMITED

US $82.14360

US $77.21498

From: US $82.14360

Stock:563

Minimum:1

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Original parts, guaranteed brand new

BLF177CR

TO-59

NXP Semiconductors

0821+

SOUTHCHIP LIMITED

US $82.14360

US $77.21498

From: US $82.14360

Stock:360

Minimum:1

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Used and refurbished parts guaranteed can work well

BLF177C

RF TANSISTOR

Philips

HF/VHF power MOS transistorHF/VHF MOS

Utsource

≥1:

US $42.54000

US $38.28600

≥2:

US $42.54000

US $38.28600

≥5:

US $41.12200

US $37.00980

≥10:

US $40.55480

US $36.49932

≥20:

US $40.27120

US $36.24408

≥30:

US $39.70400

US $35.73360

≥50:

US $39.70400

US $35.73360

≥100:

US $39.42040

US $35.47836

≥500:

US $39.13680

US $35.22312

From: US $39.13680

Description: The BLF177C is a high power N-channel enhancement mode lateral MOSFET designed for RF power amplifiers in the HF and VHF bands. Features: High power gain Low thermal resistance Low ga

Stock:2000

Minimum:1

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Used and refurbished parts guaranteed can work well

BLF177CR

RFTRANSISTOR

NXP Semiconductors

11+

Utsource

≥1:

US $44.52000

US $40.06800

≥2:

US $44.52000

US $40.06800

≥5:

US $43.03600

US $38.73240

≥10:

US $42.44240

US $38.19816

≥20:

US $42.14560

US $37.93104

≥30:

US $41.55200

US $37.39680

≥50:

US $41.55200

US $37.39680

≥100:

US $41.25520

US $37.12968

≥500:

US $40.95840

US $36.86256

From: US $40.95840

Description: The BLF177CR is a N-channel enhancement mode RF power field effect transistor from NXP. Features: High power gain Low noise figure High efficiency Low thermal resistance High breakd

Stock:2000

Minimum:1

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BLF177R

SMD

NXP Semiconductors

11+12+

Utsource

Inquiry price

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HF/VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 70 %; Frequency: 28 - 108 MHz; Load power: 150 W; Operating voltage: 50 VDC; Power gain: 19 dB; Package: SOT121B CRFM4; Container: Blister pack

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The BLF177,112 is a N-Channel Enhancement Mode Field-Effect Transistor (FET) manufactured by NXP Semiconductors. It is designed for use in high-efficiency, high-frequency switching applications, such

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