BSM10GD60DN2
MODULE
Eupec
15+
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Your search BSM10GD60DN2 and relate product result :3 items
Description: The BSM10GD60DN2 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a high-power switching device with a maximum collector-emitter voltage of 600V and a maximum colle
Stock:3240
Minimum:1
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Description: The BSM10GD60DN2 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a high-power switching device with a maximum collector-emitter voltage of 600V and a maximum colle
Stock:2000
Minimum:1
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MODULE
Eupec
00+
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes
Description: The BSM10GD60DN2 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a high-power switching device with a maximum collector-emitter voltage of 600V and a maximum colle
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