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Country CodeSIEMENS
INFINEON
STMICROELECTRONICS
Your search BUZ90 and relate product result :31 items
TO-220
Infineon Technologies AG
03+
SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated
N-Channel Power MOSFET Features: - Low on-resistance - Low gate charge - Fast switching - Avalanche rated Applications: - DC-DC converters - Motor control - Power management - Switching power suppli
Stock:10000
Minimum:2
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TO-220
Siemens
06+
SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated
Package: TO-220 Manufacturer: SIEMENS Description: BUZ90 is a N-channel power MOSFET transistor manufactured by SIEMENS. It is housed in a TO-220 package and has a drain-source voltage of 100V. Feat
Stock:10000
Minimum:2
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Description: BUZ905P is a NPN power transistor manufactured by Siemens. Features: Collector-Emitter Voltage: 800V Collector-Base Voltage: 800V Emitter-Base Voltage: 5V Collector Current: 15A Pow
Stock:10000
Minimum:1
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TO-220
Siemens
03+
SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated
Description: BUZ90A is a N-channel power MOSFET transistor manufactured by Siemens. Features: - Low on-state resistance - Low gate charge - Low input capacitance - High switching speed - High avalanch
Stock:10000
Minimum:2
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Package: TO-3P Technology/Configuration: TEC/SML Description: The BUZ900P is a N-channel enhancement mode power MOSFET designed for use in switching applications. Features: Low on-resistance Low g
Stock:10000
Minimum:2
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Stock:1040
Minimum:4
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Stock:956
Minimum:4
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Description: N-Channel Power MOSFET Features: - Low On-Resistance - Low Gate Charge - Low Input Capacitance - Fast Switching Applications: - DC-DC Converters - Motor Control - Power Supply Circuits
Stock:10000
Minimum:2
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Package: TO-3 Type: TEC/SML Description: BUZ900 is a NPN silicon transistor designed for use in high-power switching applications. Features: - High voltage and current capability - Low saturation v
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Description: NPN Darlington Transistor Features: High DC Current Gain Low Saturation Voltage High Voltage and Power Ratings High Reliability Low Noise Low Thermal Resistance High Freque
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Package: TO-3P Technology: TEC/SML Description: The BUZ901P is a N-Channel Enhancement Mode Power MOSFET designed for use in high voltage switching applications. Features: Low on-resistance Low ga
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Package: TO-3PL,TEC/SML Description: N-Channel Enhancement Mode Field Effect Transistor Features: Low On-Resistance Fast Switching Speed High Avalanche Energy Capability Low Gate Charge Lo
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Description: NPN Darlington Transistor Features: High DC Current Gain Low Saturation Voltage High Collector-Emitter Voltage High Switching Speed Low Collector-Emitter Saturation Voltage High F
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TO-3
Tec/sml
00+
The BUZ906 is a -200V P-channel Enhancement Mode Power MOSFET with high speed switching and integral protection diode designed for use in audio applications.
Description: NPN Silicon Power Transistor Features: - High DC Current Gain - High Voltage - Low Saturation Voltage - High Power Dissipation Applications: - Switching Regulators - Motor Control - Powe
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Description: The BUZ901DP is a N-channel power MOSFET transistor. Features: Low on-state resistance High switching speed Low gate charge Low threshold voltage High avalanche energy App
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Package: TO-3 Type: TEC/SML Description: The BUZ901 is a NPN Silicon power transistor designed for use in high power switching applications. It is designed to operate in a wide range of temperatures
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Package: TO-3, SML Description: BUZ905 is a N-channel enhancement mode power MOSFET. Features: High breakdown voltage Low on-resistance Low gate charge Low input capacitance Low output capacitanc
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Stock:100
Minimum:6
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Stock:1
Minimum:1
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