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Country CodeRENESAS
HITACHI
Your search CR5AS-12 and relate product result :20 items
NPN Silicon Epitaxial Planar Transistor Features: - Low collector-emitter saturation voltage - High current gain - High switching speed - High reliability - Low noise Applications: - Audio amplifiers
Stock:10000
Minimum:2
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Description: The BCR5AS-12 is a surface mount, three-terminal, medium power, NPN, silicon planar epitaxial transistor. Features: High DC current gain Low collector-emitter saturation voltage Low
Stock:10000
Minimum:8
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Description: The BCR5AS-12A-T13 is a NPN silicon epitaxial planar transistor manufactured by Renesas. Features: - Collector-emitter voltage: 40V - Collector current: 5A - Collector-base voltage: 40V
Stock:10000
Minimum:6
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Description: BCR5AS-12 is a NPN silicon epitaxial planar transistor manufactured by Hitachi. Features: High DC current gain Low collector-emitter saturation voltage Low collector-base capacitan
Stock:10000
Minimum:3
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Description: BCR5AS-12B-T13 B01L is a NPN silicon epitaxial planar transistor manufactured by Renesas. Features: -Collector-Emitter Voltage: VCEO = -12V -Collector-Base Voltage: VCBO = -20V -Emitter-
Stock:10000
Minimum:5
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Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Stock:3858
Minimum:20
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Stock:70
Minimum:12
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Stock:130
Minimum:8
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Stock:3958
Minimum:20
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Stock:2995
Minimum:5
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SOT252
Renesas
12+
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150
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SOT-252
10+
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
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