≥1:
US $1.88595
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeFAIRCHILD
VISHAY
ON SEMICONDUCTOR
HARRIS SEMICONDUCTOR
INTERSIL
INFINEON
INTERNATIONAL RECTIFIER
Your search G30N60 and relate product result :77 items
TO-3P
Fsc/har
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Package: TO-3P Manufacturer: FSC/HAR Description: G30N60 is an N-channel insulated gate bipolar transistor (IGBT) manufactured by FSC/HAR. It is designed for use in high-power applications such as mo
Stock:10000
Minimum:2
Favorite
Stock:256
Minimum:1
Favorite
TO-247
FSC
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Stock:5000
Minimum:1
Favorite
TO247
Fairchil
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Description: HGTG30N60C3D is a 600V N-channel IGBT with a maximum current rating of 30A. It is manufactured by Fairchild Semiconductor and is part of their HGTG series. Features: Low on-state resist
Stock:10000
Minimum:2
Favorite
Description: 600V N-Channel IGBT Features: Low On-Resistance RDS(on) Low Gate Charge Qg High Speed Switching Avalanche Rated Lead-Free, RoHS Compliant Halogen-Free Low Inductive Package Low VC
Stock:10000
Minimum:2
Favorite
TO-247
HAR
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes63A, 600V, UFS N
Description: HGTG30N60C3 is a high voltage, high speed, N-channel IGBT (Insulated Gate Bipolar Transistor) with a maximum collector-emitter voltage of 600V and a maximum collector current of 30A. Fea
Stock:10000
Minimum:2
Favorite
Description: N-Channel IGBT Features: Low on-state resistance Low gate charge High speed switching High surge current capability High temperature operation Low forward voltage drop Low
Stock:10000
Minimum:2
Favorite
Description: G30N60A is a 600V, 30A N-channel MOSFET produced by Fairchild Semiconductor. Features: - Low gate charge - Low on-state resistance - Fast switching speed - High avalanche energy capabili
Stock:10000
Minimum:1
Favorite
TO-3P
FAI
04+
The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
Description: This is an IGBT Discrete designed in a TO-3P package. It is based on the Field-Stop Trench design and features a 600V blocking voltage. Features: - Low saturation voltage: Vce(sat) = 2.1
Stock:10000
Minimum:2
Favorite
Description: This is a 600V, 30A N-channel MOSFET manufactured by Fairchild Semiconductor Corporation (FSC). Features: - N-channel - Enhanced PD (Power Dissipation) - Maximum Ratings of VDSS: 600V; ID
Stock:10000
Minimum:2
Favorite
Description: G30N60HS is a N-channel MOSFET transistor manufactured by Infineon Technologies. Features: Low on-state resistance High switching speed Low gate charge Low threshold voltage Avalanch
Stock:10000
Minimum:2
Favorite
TO247
Fairchil
04+
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Description: G30N60C3D is a 600V, 30A, N-channel MOSFET manufactured by Fairchild Semiconductor. Features: Low gate charge Low on-state resistance Fast switching Avalanche rated RoHS compliant
Stock:10000
Minimum:2
Favorite
Stock:1500
Minimum:10
Favorite
Stock:5000
Minimum:10
Favorite
Stock:13
Minimum:1
Favorite
Stock:2
Minimum:2
Favorite
Stock:8
Minimum:2
Favorite
Stock:1795
Minimum:5
Favorite
Description: IGBT Transistor Features: * 600V N-Channel IGBT * Low Gate Charge * Low Saturation Voltage * High Speed Switching Applications: * Motor Control * Switching Power Supplies * Uninterrupti
Stock:21144
Minimum:2
Favorite
Stock:10000
Minimum:2
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company