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Country CodeINTERNATIONAL RECTIFIER
INFINEON
Your search G4BC20KD and relate product result :17 items
TO-220
International Rectifier
00+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
Description: G4BC20KD is a four-pin, high-performance, low-saturation voltage, medium-power, NPN transistor manufactured by International Rectifier (IR). Features: * High current gain * Low saturatio
Stock:10000
Minimum:2
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TO-263
International Rectifier
13+00+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
Stock:10000
Minimum:800
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TO-263
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
Stock:10000
Minimum:800
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TO-220
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEVces=600V, Vceontyp.=2.27V, @Vge=15V, Ic=9.0A
Description: This is an Insulated Gate Bipolar Transistor (IGBT) with a TO-220 package. It is manufactured by Infineon Technologies and is part of the IRG4BC20KD series. Features: - Voltage rating of
Stock:10000
Minimum:2
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Stock:800
Minimum:50
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TO-263
International Rectifier
05+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEVces=600V, Vceontyp.=2.27V, @Vge=15V, Ic=9.0A
Description: IRG4BC20KD-S is a high voltage, high speed, insulated gate bipolar transistor (IGBT) module from International Rectifier. It is a 600V, 20A device with a maximum junction temperature of 1
Stock:10000
Minimum:3
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TO-220
International Rectifier
16+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
Description: IGBT, 600V, 20A, TO-220 Features: - Low gate charge - Low saturation voltage - High speed switching - High input impedance - Low thermal resistance Applications: - Motor control - Power s
Stock:10000
Minimum:1
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Description: This is an insulated gate bipolar transistor (IGBT) module from International Rectifier (IR). It has a maximum collector-emitter voltage of 600V and a maximum collector current of 20A. F
Stock:3282
Minimum:2
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Stock:800
Minimum:10
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Stock:1000
Minimum:6
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Description: This is an IGBT (Insulated Gate Bipolar Transistor) with a TO220 package. Features: This IGBT has a voltage rating of 600V and a current rating of 20A. It has a low on-state voltage
Stock:20749
Minimum:4
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Stock:1173
Minimum:2
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TO-263
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE
Description: IGBT Transistor Features: - Low saturation voltage - Low gate charge - High speed switching - High input impedance Application: - Motor control - Inverter - Uninterruptib
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TO220
International Rectifier
10+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE ( Vces=600V , Vce(on) typ.=2.27V , @Vge=15V , Ic=9.0A )
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D2PAK (TO-263)
Infineon Technologies AG
Single IGBT up to 20A, Infineon Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
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TO-220
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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