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Country CodeINTERNATIONAL RECTIFIER
Your search G4PH50U and relate product result :20 items
TO-3P
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
Description: This is a TO-3P power MOSFET transistor manufactured by International Rectifier (IR). Features: Low on-resistance Low gate charge Low input capacitance Low output capacitance High f
Stock:10000
Minimum:2
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TO-247
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
Description: This is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by International Rectifier (IR). It is a TO-247 packaged device. Features: Low VCE(sat) High speed switching Lo
Stock:5000
Minimum:5
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TO-3P
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
Description: This is a four-pin, TO-3P package, insulated type, NPN power transistor manufactured by International Rectifier (IR). Features: High voltage capability up to 500V High current capabilit
Stock:10000
Minimum:2
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TO-247
International Rectifier
03+
INSULATED GATE BIPOLAR TRANSISTORVces=1200V, Vceontyp.=2.78V, @Vge=15V, Ic=24A
Stock:10000
Minimum:2
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TO-247
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEVces=1200V, Vceontyp.=2.78V, @Vge=15V, Ic=24A
Description: This is an insulated gate bipolar transistor (IGBT) module manufactured by International Rectifier. It is designed for high-power switching applications in the power range of 600V and 50A
Stock:10000
Minimum:2
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Stock:5000
Minimum:10
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TO-247
International Rectifier
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PH50U with Lead Free Packaging
Description: This is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It has a maximum collector-emitter voltage of 600V, a maximum collector current of 50A, and a
Stock:10000
Minimum:2
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Description: The IRG4PH50UD is an IGBT module with an integrated anti-parallel diode. It is designed for use in medium-voltage, high-speed switching applications. Features: Low saturation voltage L
Stock:10000
Minimum:2
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TO-247
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Description: The IRG4PH50UDPBF is an Insulated Gate Bipolar Transistor (IGBT) module with a maximum collector-emitter voltage of 600V and a maximum collector current of 50A. Features: Low saturation
Stock:10000
Minimum:1
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TO247
International Rectifier
15+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
Description: The IRG4PH50U is an insulated gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 600V and a maximum collector current of 50A. Features: Low saturation vol
Stock:10000
Minimum:1
Favorite
TO-247
Ir/vishay/infineon
17/18+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
Stock:10000
Minimum:1
Favorite
TO-247
Ir/vishay/infineon
17/18+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
Description: This is a N-Channel Power MOSFET, designed for high voltage switching applications. Features: Low on-state resistance High current capability Low gate charge High avalanche capabilit
Stock:10000
Minimum:2
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TO-247
IOR
0002+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
Description: This is an insulated gate bipolar transistor (IGBT) module with a TO-247 package. Features: Low saturation voltage High input impedance Low noise High switching speed High
Stock:10000
Minimum:1
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Description: This is an Insulated Gate Bipolar Transistor (IGBT) module from International Rectifier. It has a TO3P package, and is rated for a maximum collector-emitter voltage of 600V. Features: H
Stock:156
Minimum:1
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Stock:1
Minimum:1
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Stock:22
Minimum:1
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Description: This is an Insulated Gate Bipolar Transistor (IGBT) module from International Rectifier. It has a maximum collector-emitter voltage of 600V, a maximum collector current of 50A, and a maxi
Stock:232
Minimum:1
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Stock:20778
Minimum:1
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Stock:20779
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company