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Country CodeFAIRCHILD
Your search G80N60 and relate product result :21 items
Description: G80N60 is a N-channel enhancement-mode MOSFET with a TO-3P package. Features: - Low on-resistance - Low gate charge - Low input capacitance - High current carrying capacity - High freque
Stock:10000
Minimum:2
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Description: N-Channel MOSFET Features: - Low on-resistance - Low gate charge - Low input capacitance - Fast switching Application: - DC/DC converters - Motor control - Power management - Switching
Stock:10000
Minimum:2
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Stock:3433
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TO3P Manufacturer: FSC Description: The G80N60UFD is a high voltage N-channel MOSFET produced by Fairchild Semiconductor. It has a drain-source voltage of 600V and a drain current of 80A. Features:
Stock:10000
Minimum:1
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Description: This is an N-channel UltraFET power MOSFET, manufactured by Fairchild Semiconductor. Features: - Low gate charge - Low on-resistance - Low input capacitance - Low output capacitance - Hi
Stock:10000
Minimum:1
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Stock:21275
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Stock:21276
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Stock:5000
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TO3P Manufacturer: FSC Description: The G80N60UFD is a high voltage N-channel MOSFET produced by Fairchild Semiconductor. It has a drain-source voltage of 600V and a drain current of 80A. Features:
Stock:10000
Minimum:1
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Description: G80N60RUFD is a TO-3P insulated metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by Fairchild. Features: Low on-resistance Low gate charge Fast switching Low
Stock:10000
Minimum:1
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Description: This is an N-channel UltraFET power MOSFET. Features: Low on-state resistance Low gate charge Low input capacitance Low output capacitance Low threshold voltage High avalanche energ
Stock:10000
Minimum:1
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(TO3P,F) Description: G80N60UFD is an ultra-fast recovery diode with a TO3P,F package. Features: Low forward voltage drop High surge current capability High temperature operation Low re
Stock:327
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Stock:132
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Stock:20402
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Stock:2
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