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Country CodeTOSHIBA
Your search GT15J101 and relate product result :3 items
Description: GT15J101 is a NPN epitaxial planar silicon transistor manufactured by Toshiba. Features: - High DC current gain - Low collector-emitter saturation voltage - Low collector-emitter leakage
Stock:10000
Minimum:2
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(TO3P) Description: GT15J101 is a TO3P-packaged NPN transistor. Features: Low collector-emitter saturation voltage High current gain High frequency High voltage Applications: GT15J10
Stock:121
Minimum:2
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Stock:68
Minimum:1
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