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Country CodeINFINEON
Your search IKW30N60T and relate product result :18 items
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TO-3P
Infineon Technologies AG
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: TO-247; VCE max: 600.0 V; ICmax @ 25°: 60.0 A; ICmax @ 100°: 30.0 A
Description: IKW30N60T is a N-Channel MOSFET with a maximum drain source voltage of 600V, a maximum drain current of 30A and a maximum gate threshold voltage of 4V. Features: Low on-state resistance
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Stock:1000
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Stock:21133
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Stock:1995
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TO-247
Infineon Technologies AG
Infineon TrenchStop IGBT Transistors, 600 and 650V A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop? technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. ? Collector-emitter voltage range 600 to 650V ? Very low VCEsat ? Low turn-off losses ? Short tail current ? Low EMI ? Maximum junction temperature 175°C
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Description: IKW30N60TFKSA1 is a N-channel MOSFET manufactured by Infineon Technologies. Features: Low on-state resistance Low gate charge Low threshold voltage High current capability Avalanche
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company