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Country CodeINTERNATIONAL RECTIFIER
VISHAY
INFINEON
STMICROELECTRONICS
FAIRCHILD
ON SEMICONDUCTOR
NATIONAL SEMICONDUCTOR
MOTOROLA
Your search IRF530 and relate product result :110 items
TO-220
International Rectifier
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Package Type: TO-220 Manufacturer: IR Description: The IRF530 is a N-Channel Power MOSFET designed for use in switching applications. It has a low on-state resistance and can handle up to 100V and 30
Stock:10000
Minimum:3
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Stock:25
Minimum:10
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TO-220
Vishay Siliconix
13+
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Description: N-Channel Power MOSFET Features: - Max drain current: 33A - Max drain-source voltage: 100V - RDS(on) max: 0.06ohm - Gate threshold voltage: 4V - Operating temperature range: -
Stock:10000
Minimum:2
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Stock:50
Minimum:6
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Stock:582
Minimum:8
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Stock:675
Minimum:5
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Description: N-Channel Power MOSFET Features: Low On-Resistance Fast Switching Low Input Capacitance Low Gate Charge Low Threshold Voltage Avalanche Rated Applications: DC-DC Converters Motor
Stock:5647
Minimum:6
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Stock:185
Minimum:4
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Stock:109
Minimum:7
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Stock:100
Minimum:3
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Stock:95
Minimum:5
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Stock:681
Minimum:5
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Stock:100
Minimum:5
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Stock:9028
Minimum:4
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Stock:2857
Minimum:2
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TO-263
International Rectifier
1542+
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Stock:10000
Minimum:3
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TO-220
International Rectifier
08+
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Description: This is a N-Channel Power MOSFET with a maximum drain-source voltage of 100V, a maximum drain current of 15A, and a maximum power dissipation of 50W. Features: - Low on-resistance - Low
Stock:10000
Minimum:3
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TO-263
International Rectifier
08+
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Description: The IRF5305S is a N-channel Power MOSFET from International Rectifier that has a maximum drain-source voltage of 55V and a maximum drain current of 59A. Features: - Low gate charge - Low
Stock:10000
Minimum:10
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TO-263
International Rectifier
10+
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Description: This is a N-Channel Power MOSFET manufactured by International Rectifier. It is a TO-263 package with an integrated Schottky diode. Features: Low On-Resistance Low Gate Charge
Stock:10000
Minimum:5
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Description: The IRF530N is a N-Channel Power MOSFET produced by International Rectifier. It is designed for use in switching applications and is rated for a drain-source voltage of 100V, a drain curr
Stock:10000
Minimum:5
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