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Country CodeINTERNATIONAL RECTIFIER
INFINEON
Your search IRFB38N20DPBF and relate product result :12 items
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Description: This is an N-channel power MOSFET from International Rectifier. It has a drain-source voltage of 200V, a drain current of 38A, and a maximum power dissipation of 125W. Features: Low On-
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TO-220
International Rectifier
HEXFET Power MOSFET
Description: The IRFB38N20D is a N-channel power MOSFET from International Rectifier. It is designed for high voltage, high speed switching applications. It is suitable for use in switching regulator
Stock:10000
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TO-220
International Rectifier
17+
HEXFET Power MOSFET
Description: This is a N-channel MOSFET with a maximum drain-source voltage of 200V and a maximum drain current of 38A. It has a low gate-source threshold voltage of 2V and a maximum power dissipation
Stock:10000
Minimum:2
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TO-220
International Rectifier
new cycle
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company