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Country CodeINTERNATIONAL RECTIFIER
VISHAY
HARRIS SEMICONDUCTOR
SIGNETICS
Your search IRFD120 and relate product result :20 items
DIP-4
Vishay Siliconix
16+
1.3A, 100V, 0.300 Ohm,N-Channel PowerMOSFET1.3A, 100V, 0.300 Ohm,NMOS
Description: N-Channel Power MOSFET Features: Low On-Resistance Low Input Capacitance Low Gate Charge Fast Switching Ease of Paralleling Improved dv/dt Capability 175°C Operating
Stock:10000
Minimum:10
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DIP-4
International Rectifier
07+
1.3A, 100V, 0.300 Ohm,N-Channel PowerMOSFET1.3A, 100V, 0.300 Ohm,NMOS
Description: N-Channel Power MOSFET Features: Low On-Resistance Low Gate Charge Fast Switching Avalanche Rated RoHS Compliant Applications: DC-DC Converters Motor Control Load Switching Power
Stock:10000
Minimum:5
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Stock:57
Minimum:12
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Stock:98
Minimum:6
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Stock:18
Minimum:8
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Stock:15
Minimum:5
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Stock:65
Minimum:5
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Description: N-Channel Power MOSFET Features: Low On-Resistance Fast Switching Low Gate Charge Low Threshold Avalanche Rated Applications: DC-DC Converters Motor Control Soleno
Stock:33400
Minimum:10
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Stock:120
Minimum:5
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Stock:418
Minimum:5
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DIP-4
Vishay Siliconix
16+
1.3A, 100V, 0.300 Ohm,N-Channel PowerMOSFET1.3A, 100V, 0.300 Ohm,NMOS
Description: The IRFD120PBF is a N-channel Power MOSFET from Vishay Semiconductor. It is a surface mount device with a 4-pin DIP package. Features: Low on-resistance Low gate charge Fast s
Stock:10000
Minimum:10
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Description: The IRFD120PBF is a N-channel Power MOSFET from Vishay Semiconductor. It is a surface mount device with a 4-pin DIP package. Features: Low on-resistance Low gate charge Fast s
Stock:5000
Minimum:100
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Description: N-Channel Power MOSFET Features: Low On-Resistance Low Input Capacitance Low Input/Output Leakage Low Threshold Voltage High Speed Switching Low Gate Charge High Current Ca
Stock:10000
Minimum:3
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Stock:650
Minimum:7
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