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Country CodeVISHAY
INTERNATIONAL RECTIFIER
INFINEON
STMICROELECTRONICS
IXYS
INTERSIL
Harris Semiconductor
FAIRCHILD
Your search IRFP460 and relate product result :66 items
TO-247
International Rectifier
04+
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Description: N-Channel Power MOSFET Features: Low Gate Charge Low On-Resistance Fast Switching 100% Avalanche Tested RoHS Compliant Applications: Switching Regulators Motor
Stock:10000
Minimum:1
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Stock:28
Minimum:1
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TO-247
IOR
10+
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Description: N-Channel Power MOSFET Features: -High voltage capability – 500V -Low Gate Charge -Low On-Resistance – 19.6 milliohms -10μs fast switching -High current capability – 93A Application: -D
Stock:10000
Minimum:1
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Stock:383
Minimum:2
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Stock:10500
Minimum:9
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Stock:2749
Minimum:5
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TO-247
Harris Semiconductor
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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TO-247
Vishay Siliconix
12+
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Stock:10000
Minimum:10
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TO-247
Vishay Siliconix
17+
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Description: The IRFP460A is a N-Channel MOSFET from Vishay Semiconductors. It is designed for use in high-frequency switching applications. Features: Low on-resistance Low gate charge Low input c
Stock:10000
Minimum:10
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TO-247
International Rectifier
06+
SMPS MOSFET VDSS=500V , RDSonmax=0.27ヘ , ID=20A
Description: The IRFP460APBF is a N-Channel Power MOSFET from International Rectifier with a maximum drain source voltage of 500V, a drain current of 54A and a maximum power dissipation of 517W. Feat
Stock:10000
Minimum:2
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TO247
International Rectifier
06-07+
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)
Description: This is a N-Channel MOSFET transistor manufactured by International Rectifier. Features: Low On-Resistance Low Gate Charge Fast Switching RoHS Compliant Halogen-Free Low Input Capac
Stock:10000
Minimum:2
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TO-247
International Rectifier
01+
500V,20A,N-Channel HEXFET Power MOSFET500V,20A,N HEXFET MOS
Description: N-Channel Power MOSFET Features: - Low On-Resistance - Low Gate Charge - Fast Switching - 175°C Operating Temperature - Avalanche Energy Rated - RoHS Compliant Applications: - Switching P
Stock:10000
Minimum:2
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Package Type: TO-247 Manufacturer: IR Description: The IRFP460N is a N-Channel MOSFET with a maximum drain source voltage of 500V and a maximum drain current of 110A. Features: Low gate charge
Stock:10000
Minimum:2
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TO3P
Ir/fsc
05+
500V N-Channel C-FET / Substitute of SSH20N50, SSH22N50A,IRFP460; Package: TO-3P; No of Pins: 3; Container: Rail
Stock:10000
Minimum:2
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TO-247
International Rectifier
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
. Description: This is an N-Channel HEXFET Power MOSFET from International Rectifier. This device features a maximum drain-source voltage of 500V and a typical drain current of 32A. Features: - Low
Stock:10000
Minimum:2
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Stock:900
Minimum:5
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Stock:2551
Minimum:5
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Stock:4051
Minimum:15
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Stock:5000
Minimum:10
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