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Country CodeIXYS
Your search IXGH10N60A and relate product result :6 items
Stock:10000
Minimum:2
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Description: IXGH10N60A is an N-Channel IGBT module from IXYS. It has a maximum collector-emitter voltage of 600V, a maximum collector current of 10A, and a maximum gate-emitter voltage of 20V. Featu
Stock:10000
Minimum:2
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TO-247
IXYS
00+
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
Description: IXGH10N60AU1 is a 600V, 10A, N-channel IGBT from IXYS. Features: Low on-state voltage Low gate charge Low switching losses High current capability High speed switching High surge ca
Stock:10000
Minimum:2
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Description: IXGH10N60AUI is an N-channel MOSFET from IXYS. It is housed in a TO-247 package and has a maximum drain-source voltage of 600V. Features: Low gate charge Low on-state resistance
Stock:10000
Minimum:2
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Description: IXGH10N60AU1 is a 600V, 10A, N-channel IGBT from IXYS. Features: Low on-state voltage Low gate charge Low switching losses High current capability High speed switching High surge ca
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company